2 edition of Single event effects and laser simulation studies found in the catalog.
Single event effects and laser simulation studies
by National Aeronautics and Space Administration, Jet Propulsion Laboratory, California Institute of Technology, National Technical Information Service, distributor in Pasadena, Calif, [Springfield, Va
Written in English
|Statement||Q. Kim ... [et al.].|
|Series||[NASA contractor report] -- NASA CR-194506.|
|Contributions||Kim, Q., Jet Propulsion Laboratory (U.S.)|
|The Physical Object|
Single-Event Effects Induced by Pulsed Laser Irradiation Dale McMorrow Naval Research Laboratory, Washington, DC Stephen Buchner QSS Group., Inc., Seabrook, MD Defense Threat Reduction Agency Proceedings of the International Workshop on Radiation Effects on Semiconductor Devices for Space Application. This webinar will provide a discussion of the methods used by radiation effects engineers to model the impact of Single Event Effects (SEE) and some of their.
The single event upset (SEU) linear energy transfer threshold (LETTH) of radiation hardened 64K Static Random Access Memories (SRAM's) was measured with a picosecond pulsed dye laser system. These results were compared with standard heavy ion accelerator (Brookhaven National Laboratory (BNL)) measurements of the same SRAM's. events, system state variables, entities and attributes, list processing, activities and delays, and finally the definition of discrete-event simulation. The process of making and testing hypotheses about models and then revising designs or.
Wavelength tunable semiconductor nanowire (NW) lasers are promising for multifunctional applications ranging from optical communication to spectroscopy analysis. Here, we present a demonstration of utilizing the surface plasmon polariton (SPP) enhanced Burstein–Moss (BM) effect to tune the lasing wavelength of a single semiconductor NW. The photonic lasing mode of the CdS NW (with length. Fishman’s book can be highly recommended for practitioners as well as for students and simulation specialists." (P. Köchel, Operations Research-Spektrum, Is ) "This is an excellent and well-written text on discrete event simulation with a focus on applications in Operations s: 1.
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Get this from a library. Single event effects and laser simulation studies. [Q Kim; Jet Propulsion Laboratory (U.S.);]. A pulsed laser system for simulating heavy-ion, single-event effects in semiconductor devices is described.
The fundamentals of ion and laser interactions in silicon are : Stephen Buchner. Scope of this Book 2.
Foundations of Single Event Analysis and Prediction Overview of Single Particle Effects Particle Energy Deposition Single Event Environments The Solar Wind and the Solar Cycle The Magnetosphere Cosmic Ray and Trapped Particle Motion Galactic Cosmic Rays 24Author: Edward Petersen.
The single event upset (SEU) linear energy transfer threshold (LETTH) of radiation hardened 64K Static Random Access Memories (SRAM's) was measured with a picosecond pulsed dye laser system.
These results were compared with standard heavy ion accelerator (Brookhaven National Laboratory (BNL)) measurements of the same SRAM's.
With heavy ions, the LETTH of the Honeywell Author: Q. Kim, H. Schwartz, K. Mccarty, J. Coss, C. Barnes. The results of computation-experimental modeling of single-event latchup effects under the laser radiation focused on the IC crystal backside—the substrate side—are presented. Book Abstract: Enables readers to better understand, calculate, and manage single event effects Single event effects, caused by single ionizing particles that penetrate sensitive nodes within an electronic device, can lead to anything from annoying system responses to catastrophic system failures.
Average, minimum and maximum single-event transient pulsewidths as generated by depositing charge from a laser with a pulse energy of pJ on an NMOS transistor in the last inverter in a string of twenty that were fabricated in the AMI.
This paper reviews the status of research in modeling and simulation of single-event effects (SEE) in digital devices and integrated circuits. After introducing a brief historical overview of SEE simulation, different level simulation approaches of SEE are detailed, including material-level physical simulation where two primary methods by which.
J. Bogaerts, in High Performance Silicon Imaging, SEEs. SEEs is a general term that encompasses single event upset (SEU) and single event latch-up (SEL).
Apart from the long-lived effects that are usually caused by a particular total ionising dose, an energetic heavy ion or proton may generate enough electron-hole pairs along its track that can affect the functionality of circuits. for single event effects will be covered. An overview of the single event interaction mechanisms and the complex matrix of technologies and effects is also provided.
Systems-level impacts are determined by analyzing the propagation of SEEs and assessing criticality for which we will also. Laser Simulation of Single Event Effects in Pulse Width Modulators and Memories Final Presentation of ESA/ESTEC Contract No.
/02/NL/PA (Phase 2) Andrew Chugg, Senior Technical Expert, Radiation Physics & EMC. Physics-based simulation of single-event effects Abstract: This paper reviews techniques for physics-based device-level simulation of single-event effects (SEEs) in Si microelectronic devices and integrated circuits.
Issues for device modeling of SEE are discussed in the context of providing physical insight into mechanisms contributing to SEE. Laser Single Event Effects Studies - Phase 3 ESA ESTEC QCA 8 Andrew Chugg, Senior Technical Expert, Radiation Physics & EMC SEREEL2 Laser SEE Simulation Facility – conceptual plan.
Ref.: Page 5 - 01/02/ •Laser can therefore establish derating of. The book includes a discussion of the radiation environments in space and in the atmosphere, radiation rate prediction depending on the orbit to allow electronics engineers to design and select radiation tolerant components and systems, and single event prediction.
the majority dealing with single event effects. An IEEE Fellow, Dr. Petersen. The IEE Seminar on Cosmic Radiation Single Event Effects and Avionics, (Ref.
/) > 2 - 2/12 Abstract A collection of slides from the author's seminar presentation is given. The applied simulation method is based on reproducing Single Event Transient effects by means of charge generation models that emulate the current injection produced by particle impacts.
The ionization model applied in electrical simulation is a current source with double exponential dynamics, as illustrated in the next equation.
Single event effects and laser simulation studies The single event upset (SEU) linear energy transfer threshold (LETTH) of radiation hardened 64K Static Random Access Memories (SRAM's) was measured with a picosecond pulsed dye laser system. These results were compared with standard heavy ion accelerator (Brookhaven National Laboratory (BNL)) measurements of the same SRAM's.
Single Event Effects. A single event effect (SEE) results from, as the term suggests, a single, energetic particle. The possibility of single-event upsets was first postulated by Wallmark and Marcus in  The first actual satellite anomalies were reported by Binder et al.
in  Some of the early pioneering work was by May and Woods, who investigated alpha-particle-induced soft. Single Event Effects (SEEs) are caused by a single, energetic particle, and can take on many forms.
Single Event Upsets (SEUs) are soft errors, and non-destructive. They normally appear as transient pulses in logic or support circuitry, or as bitflips in memory cells or registers.
Several types of hard errors, potentially destructive, can. This chapter covers the behavior of complex circuits and systems in the presence of single-event effects, and the transformation of the related faults to errors and errors to functional failures. In addition, an overview of practical methods and techniques for single-event effects analysis is presented, attempting to help the reliability.
Stroke, the third leading cause of death and disability, requires timely delivery of best-practice care to improve patient outcomes. In high-income countries, major developments have streamlined systems of care and improved the speed of recognition, response, triage, and delivery of acute treatments.Power metal-oxide semiconductor field-effect transistors (MOSFETs) are increasingly used in the space probes where the environment is composed of various kinds of particles.
Thus, it is essential to study the influence of the natural radiation environment on the electrical behaviour of MOSFETs in space. This study presents two-dimensional numerical simulation results, which investigates the.A key point in SEE (Single Event Effect) simulation experiment is how to calculate the equivalent LET (Linear Energy Transfer) for laser pulse.
In this paper, the calculation method considering the influences of nonlinear absorption in semiconductor, reflection and .